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High-performance power MOSFET transistor designed for fast switching and high currents. Ideal for power circuits, switching power supplies and motor drives.
Technical specifications
- Drain-source voltage (VDS): 60 V
- Maximum current (ID): 200 A
- RDS(on) resistance: 2.4 mΩ
- Technology: N-channel MOSFET
- Package: TO-247
- Mounting: through-hole (THT)
- Equivalents: IRFP3006, IRFP3206, IRFP3306
Applications
- Switching power supplies and DC-DC converters
- Inverters, variable frequency drives, motor controllers
- Audio amplifiers and high-power projects
New product, tested and ready to use. Suitable for replacing or designing power circuits requiring a robust, low-loss MOSFET.
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